Diode with Reverse Recovery
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Description
Ideal Diode with reverse recovery effet
The reverse recovery effect is modeled using a Voltage Controlled Current Source as shown in the figure below.
Internal parameters of the model are calculated using the following equations:
\tfrac{L_{rr}}{R_{rr}} = \tfrac{1}{\ln 10} * [t_{rr} - I_{rrm} / (\tfrac{dI_r}{dt})]
K = \tfrac{I_{rrm}}{L} * (\tfrac{dI_r}{dt})^{-1} * [1 - \exp(\tfrac{-I_{rrm}}{L * \tfrac{dI_r}{dt} * (K+1/R_{rr})})]^{-1}
If Irrm and trr are provided (> 0.0), Qrr is ignored. If Irrm or trr is equal to 0.0, its value is derived from the following equations:
(\tfrac{1}{2} - \tfrac{1}{\ln 10}) * (\tfrac{dI_r}{dt})^{-1} * I^2_{rrm} + \tfrac{t_{rr}}{\ln 10} * I_{rrm} - Q_{rr} = 0
Irrm value is also checked to validate the geometric law:
I_{rrm} < t_{rr} * \tfrac{dI_r}{dt}
Reference: MAST Power Diode and Thyristor Models Including Automatic Parameter Extraction, Alan COURTAY, 1995
Library
Electrical > Semiconductors
Parameters
| Property | Display Name | Parameter Type | Description |
|---|---|---|---|
| Ron | Ron [Ohm] | DoubleParameter | Diode Resistance value, in Ohm |
| Vf | Forward Voltage [V] | DoubleParameter | Diode Forward Voltage, in V |
| Irrm | Reverse Recovery Peak Current [A] | DoubleParameter | Diode Reverse Recovery Peak Current, in A |
| Trr | Reverse Recovery Time [s] | DoubleParameter | Diode Reverse Recovery Time, in s |
| Qrr | Reverse Recovery Charge [C] | DoubleParameter | Diode Reverse Recovery Charge, in C |
| DeltaIrOnDeltaT | Current slope at turn-off [A/s] | DoubleParameter | Diode Current slope at turn-off, in A/s |
| Lrr | Reverse Recovery Inductance [H] | DoubleParameter | Diode Reverse Recovery Inductance, in H |
Pins
| Property | Pin Name | Type | Description |
|---|---|---|---|
| Anode | Anode | Electrical | Anode |
| Cathode | Cathode | Electrical | Cathode |
Default Size
| Width | Height |
|---|---|
| 6 | 2 |