Detailed P-Channel MOSFET (Datasheet)

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Description

Datasheet-driven P-channel MOSFET model for high-side and complementary switch applications.

What you get

• Same workflows as the detailed N-channel model, now preset with P-channel polarity.
• Three user-supplied nonlinear capacitances $C_{GD}$, $C_{GS}$, $C_{DS}$ that you can extract from datasheet $C_{ISS}$, $C_{OSS}$, and $C_{RSS}$ curves (use $C_{GS} = C_{ISS} - C_{RSS}$ and $C_{DS} = C_{OSS} - C_{RSS}$).
• A body-diode characteristic table for the intrinsic source-to-drain diode.
• Transfer and output characteristic matrices to capture datasheet plots of $I_D$ vs $V_{GS}$ and $I_D$ vs $V_{DS}$.
• Initial condition fields to preload $V_{GS}$ and $V_{DS}$ at simulation start.

Preparing your datasheet data

1. Record the transfer curve as $|I_D|$ vs $|V_{GS}|$ at a fixed $|V_{DS}|$. Enter the magnitudes exactly as read; the model applies the P-channel polarity automatically.
2. Capture the output characteristic $|I_D|$ vs $|V_{DS}|$ for a representative $|V_{GS}|$. Use positive magnitudes even if the datasheet plots negative voltages.
3. Populate Ciss, Coss, and Crss with either single values or $|V_{DS}|$-dependent tables. Interpolation is performed if the voltage grids differ.
4. For the body-diode matrix, provide source-to-drain voltage and current magnitudes describing forward conduction when the source is at the higher potential.
5. Set VgsInit and VdsInit to the actual signed voltages you expect at $t = 0$; for example, -12 V on the gate keeps the device off in a high-side switch.

Validation

Start with the default curves, then overlay your own measured datasets. Make sure the tables are monotonic to keep the simulation stable.

Reading the symbol

• The gate arrow points out of the channel, highlighting P-channel conduction.
• The body diode is flipped relative to the N-channel symbol so current flows from source to drain when forward biased.
• A small bubble on the gate reminds you that the device turns on when the gate is pulled low with respect to the source.

Drop the device anywhere you would normally place the N-channel version; the pins (Drain, Source, Gate) follow the same naming conventions so you can replace one device with the other in existing schematics.

Library

Electrical > Semiconductors

Parameters

Property	Display Name	Parameter Type	Description
ChannelType	ChannelType	StringParameter	MOSFET channel type (locked to "P" for the solver)
Rg	Rg [Ohm]	DoubleParameter	Gate internal resistance value, in Ohm
VgsIdMatrix	Transfer Characteristic |Id|[A] vs |Vgs|[V]	DoubleMatrixParameter	Drain-source current magnitude [A] vs. gate-source voltage magnitude [V]
VgsIdMatrix_Vds	Transfer Characteristics |Vds| [V]	DoubleParameter	|Vds| value corresponding to the Id vs Vds data
VdsIdMatrix	Output Characteristics |Id|[A] vs |Vds|[V]	DoubleMatrixParameter	Drain-source current magnitude [A] vs drain-source voltage magnitude [V]
VdsIdMatrix_Vgs	Output Characteristics |Vgs| [V]	DoubleParameter	|Vgs| value corresponding to the Id vs Vds data
Ciss	Input Capacitance Ciss[F] vs |Vds|[V]	DoubleMatrixParameter	Input capacitance Ciss[F] vs |Vds|[V]
Coss	Output Capacitance Coss[F] vs |Vds|[V]	DoubleMatrixParameter	Output capacitance Coss[F] vs |Vds|[V]
Crss	Reverse Transfer Capacitance Crss[F] vs |Vds|[V]	DoubleMatrixParameter	Reverse transfer capacitance Crss[F] vs |Vds|[V]
VgsInit	Initial Vgs Voltage [V]	DoubleParameter	Initial Vgs capacitor voltage, in V (signed)
VdsInit	Initial Vds Voltage [V]	DoubleParameter	Initial Vds capacitor voltage, in V (signed)
Vsd_Is_BodyDiodeMatrix	Body Diode |Isd|[A] vs |Vsd|[V]	DoubleMatrixParameter	Source-drain current magnitude vs source-drain voltage magnitude (body diode)

Pins

Property	Pin Name	Type	Description
Drain	Drain	Electrical	Drain
Source	Source	Electrical	Source
Gate	Gate	Electrical	Gate (Control Input)

Default Size

Width	Height
4	6